The SiC MPS diodes from RIR Power Electronics Limited are silicon carbide merged-PiN Schottky devices rated up to 1200 V, combining Schottky and PiN structures to balance low switching losses with ...
A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric ...
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...
Changes in the design and manufacture of laser diodes are seeding fundamental shifts in the way that we think about the cost and reliability of high brightness laser systems. Robert Martinsen of ...
In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and ...
Frankfurt Laser Company, a global leader in laser technology solutions, launches its new series of high-power fiber coupled laser diodes, setting a new standard in the laser industry. The innovative ...
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