Single-channel isolated gate drivers in the 1ED301xMC121 series from Infineon are pin-compatible replacements for optocoupler ...
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Redefining GaN power devices for adoption in EVs and data centers
Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
An advanced gate design could reshape EV and data center power systems.
RS offers an extensive selection of smart products optimized to support predictive maintenance strategies and improve ...
GaN power devices are expanding into various industries, including AI data centres, robotics, electric vehicles, renewable ...
Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.
Infineon has published the 2026 edition of its annual GaN Insights, looking at the growing adoption of GaN power solutions. “GaN has become a market reality that has gained traction across various ...
A significant design flaw in Shelly’s new Gen 4 home security devices could leave millions of European homes open to attacks, ...
Subcommittee went over December’s itemized estimate report, along with facilities updates, during their Tuesday, January 27 meeting. For her ...
GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...
Everybody Ought to Be Rich! Borrow money now and get into the stock market before it’s too late!” That was America in the 1920s, an era when speculation ...
Abstract: In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power switches at 600-V class is conducted in single-phase T-type inverter. Gate driver requirements, ...
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